A Cleanroom in a Glovebox

Abstract

The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system which allows for the fabrication and characterization of devices in an inert argon atmosphere. We demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Connection to a vacuum suitcase is also demonstrated to enable receiving from and transfer to various ultra-high vacuum (UHV) equipment including molecular-beam epitaxy (MBE) and scanning tunneling microscopy (STM).

References in corpus (31)

• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• Raman spectroscopy as a versatile tool for studying the properties of graphene
• Single-Layer MoS2 Phototransistors
• Observation of tightly bound trions in monolayer MoS2
• Tuning superconductivity in twisted bilayer graphene
• Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
• Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
• Moiré Excitons in Van der Waals Heterostructures
• Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
• Interface-Induced Phenomena in Magnetism
• Commensurate-incommensurate transition for graphene on hexagonal boron nitride
• Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
• Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2
• Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
• Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
• Crystal Symmetry Breaking in Few-Quintuple Bismuth Telluride Films: Applications in Nanometrology of Topological Insulators
• Scalable production of high sensitivity, label-free DNA biosensors based on back-gated graphene field-effect transistors
• Proximity-induced high-temperature superconductivity in topological insulators Bi2Se3 and Bi2Te3
• High mobility in a van der Waals layered antiferromagnetic metal
• Long-Distance Spin Transport Through a Graphene Quantum Hall Antiferromagnet
• Sign reversing Hall effect in atomically thin high temperature superconductors
• Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
• Possible Structural Transformation and Enhanced Magnetic Fluctuations in Exfoliated $\alpha$-RuCl${}_3$
• Interface high-temperature superconductivity
• Evidence for Helical Hinge Zero Modes in an Fe-Based Superconductor
• Stability of exfoliated Bi${}_2$Sr${}_2$Dy${}_x$Ca${}_{1-x}$Cu${}_2$O${}_{8+\delta }$ studied by Raman microscopy
• Local phonon mode in thermoelectric Bi2Te2Se from charge neutral antisites
• Low vibration high numerical aperture automated variable temperature Raman microscope
• The stability of exfoliated FeSe nanosheets during in-air device fabrication process
• FeTe${}_{0.55}$Se${}_{0.45}$ van der Waals Tunneling Devices
• Engineering tunnel junctions on ballistic semiconductor nanowires

Cited by in corpus (6)

• Axial Higgs Mode Detected by Quantum Pathway Interference in RTe3
• Uncovering the Hidden Ferroaxial Density Wave as the Origin of the Axial Higgs Mode in RTe${}_3$
• Magnetic field control over the axialness of Higgs modes in charge-density wave compounds
• The effect of surface oxidation and crystal thickness on magnetic properties and magnetic domain structures of Cr2Ge2Te6
• Cuprate Twistronics for Quantum Hardware
• Direct-Write Printed Contacts to Layered and 2D Materials