Local phonon mode in thermoelectric Bi2Te2Se from charge neutral antisites
arXiv:1603.00483 · doi:10.1063/1.4941022
Abstract
Local modes caused by defects play a significant role in the thermal transport properties of thermoelectrics. Of particular interest are charge-neutral defects that suppress thermal conductivity, without significantly reducing electrical transport. Here we report a temperature dependent Raman study, that identifies such a mode in a standard thermoelectric material, Bi2Te2Se. One of the modes observed, whose origin has been debated for decades, was shown mostly likely to be an antisite defect induced local mode. The anomalous temperature independent broadening of the local mode is ascribed to the random arrangement of Se atoms. The temperature renormalization of all modes are well explained by an anharmonic model-Klemens's model.
arXiv comment6 pages, 5 figures
References in corpus (14)
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
- Phonon-glass electron-crystal thermoelectric clathrates: Experiments and theory
- Scattering Continuum and Possible Fractionalized Excitations in -RuCl
- Low carrier concentration crystals of the topological insulator BiTeSe
- Synthesis of Graphene on Gold
- Optical properties of Bi2Te2Se at ambient and high pressure
- Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3
- Fabrication and Characterization of Topological Insulator BiSe Nanocrystals
- Helical fluctuations in the Raman response of the topological insulator Bi2Se3
- Optical evidence of surface state suppression in Bi based topological insulators
- Raman study of the phonon symmetries in BiFeO single crystals
- Stability of exfoliated BiSrDyCaCuO studied by Raman microscopy
- Evidence for a New Excitation at the Interface Between a High-Tc Superconductor and a Topological Insulator
Cited by in corpus (5)
- Phonon mode calculations and Raman spectroscopy of the bulk-insulating topological insulator BiSbTeSe
- A Cleanroom in a Glovebox
- Low vibration high numerical aperture automated variable temperature Raman microscope
- Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator BiTeSe (x = 0, 2, 3)
- Possible Lattice and Charge Order in CuxBi2Te2Se