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Samuel W. LaGasse

8 papers hereh-index 7261 citations24 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author3
  • middle author4

Across the 7 of 8 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall7
  • cs.ET1

identity via Semantic Scholar / OpenAlex

activity
20162026
most citedUltra-sharp lateral p-n junctions in modulation-doped graphene

30 citations · 74 across the 7 of their papers we have counts for

collaborators
Showing 2018Show all

1 paper · 1 filter

cond-mat.mes-hall2018

Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe2​ heterojunctions

Samuel W. LaGasse, Prathamesh Dhakras, Takashi Taniguchi +2

Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the ju…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.