Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps

Abstract

We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple junctions, resulting in negligible overall current. The resistance of the device is enhanced by several orders of magnitude by biasing the gates into the bipolar $npn$ doping regime, as the ON state in the near homogeneous $n{n}^{-}n$ regime remains highly conductive. The mobility is preserved because the switching involves a transmission gap instead of a structural band-gap that would reduce the number of available channels of conduction. Under certain conditions this transmission gap is highly gate tunable, allowing a subthermal turn-on that beats the Landauer bound on switching energy limiting present day digital electronics.

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Cited by in corpus (13)

• Graphene Transistor Based on Tunable Dirac-Fermion-Optics
• Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene
• Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions
• Impact of geometry and non-idealities on electron 'optics' based graphene p-n junction devices
• Spintronic signatures of Klein tunneling in topological insulators
• A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
• Atomic scale characterization of graphene p-n junctions for electron-optical applications
• Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance
• Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
• Transmission Engineering as a route to Subthermal Switching
• Taylor series of Landauer conductance
• Strong equilibration of Landau levels edge-states at the graphene edge
• Graphene Klein tunnel transistors for high speed analog RF applications