Transmission Engineering as a route to Subthermal Switching

Abstract

The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides a convenient way to derive the subthreshold swing in each case analytically and suggests ways to beat the Boltzmann limit.

Special issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics

References in corpus (6)

• Chiral tunneling and the Klein paradox in graphene
• Correlated Electron Materials and Field Effect Transistors for Logic: A Review
• Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors
• Manifestation of chiral tunneling at a tilted graphene pn junction
• Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps
• Subthermal switching with nanomechanical relays

Cited by in corpus (2)

• Impact of geometry and non-idealities on electron 'optics' based graphene p-n junction devices
• Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance