Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

Abstract

The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.

arXiv comment5 pages, 4 figures

References in corpus (24)

• Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
• Model Hamiltonian for Topological Insulators
• Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions
• Roadmap of spin-orbit torques
• Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material
• Room temperature spin-orbit torque switching induced by a topological insulator
• Thermally assisted magnetization reversal in the presence of a spin-transfer torque
• Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques
• Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
• Switching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation
• Above 400 K Robust Perpendicular Ferromagnetic Phase in a Topological Insulator
• Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
• Dirac Spin-Orbit Torques at the Surface of Topological Insulators
• Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications
• Spin-Torque Generation in Topological-Insulator-Based Heterostructures
• Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
• Electrostatically Controlled Magnetization Rotation in Ferromagnet-Topological Insulator Planar Structures
• Graphene Transistor Based on Tunable Dirac-Fermion-Optics
• Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps
• Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi${}_2$Se${}_3$
• Spin Transfer Torque with Spin Diffusion in Magnetic Tunnel Junctions
• Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
• Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures
• Anatomy of nanomagnetic switching at a 3D Topological Insulator PN junction

Cited by in corpus (3)

• Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
• Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
• Enhanced detection of circularly polarized photons with topological materials