activity
20132025
most citedOpto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

220 citations · 570 across the 19 of their papers we have counts for

collaborators

19 papers

cond-mat.mtrl-sci2025

Interface Structure and Electronic Properties in Cubic Boron Nitride - Diamond Heterostructures

Cody L. Milne, Hector Gomez, Adway Gupta +7

Heterointerfaces of cubic boron nitride (cBN) with diamond have garnered significant interest due to their ultra-wide bandgaps and small lattice mismatch (\%), offering pr…

cond-mat.mtrl-sci2024

Thermal boundary conductance of metal diamond interfaces predicted by machine learning interatomic potentials

Khalid Zobaid Adnan, Mahesh R. Neupane, Tianli Feng

Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices.…

cond-mat.mtrl-sci2024

Evolution of Berry Phase and Half-Metallicity in CrTe in Response to Strain, Filling, Thickness, and Surface Termination

Sohee Kwon, Yuhang Liu, Hang Chi +3

CrTe is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-t…

physics.app-ph2023★ 13 cited

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Abhijit Biswas, Gustavo A. Alvarez, Tao Li +19

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. Howeve…

cond-mat.mtrl-sci2023★ 42 cited

Structural, electronic, and magnetic properties of CrTe2

Yuhang Liu, Sohee Kwon, George J. de Coster +2

Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation ene…

cond-mat.mtrl-sci2023★ 16 cited

Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites

Abhijit Biswas, Rui Xu, Joyce Christiansen-Salameh +21

Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. T…

cond-mat.mtrl-sci2023★ 16 cited

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez +24

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are…

cond-mat.mes-hall2023★ 2 cited

Structural tuning magnetism and topology in a magnetic topological insulator

Christopher Eckberg, Gang Qiu, Tao Qu +10

To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topologic…

physics.app-ph2022★ 18 cited

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Abhijit Biswas, Mingfei Xu, Kai Fu +18

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…

cond-mat.mtrl-sci2022★ 19 cited

Unidirectional domain growth of hexagonal boron nitride thin films

Abhijit Biswas, Qiyuan Ruan, Frank Lee +16

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morp…

physics.app-ph2022★ 20 cited

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Abhijit Biswas, Rishi Maiti, Frank Lee +21

Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirem…

cond-mat.mtrl-sci2022★ 67 cited

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Hang Chi, Yunbo Ou, Tim B. Eldred +22

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magne…

cond-mat.mes-hall2022★ 8 cited

Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

Hamed Vakili, Samiran Ganguly, George J. de Coster +2

The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torqu…

cond-mat.mtrl-sci2022★ 6 cited

Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces

Eliezer Oliveira, Chenxi Li, Xiang Zhang +11

The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected o…

cond-mat.mtrl-sci2021★ 10 cited

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Eliezer F. Oliveira, Mahesh R. Neupane, Chenxi Li +9

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hyd…

cond-mat.mes-hall2017★ 72 cited

Exciton condensate in bilayer transition metal dichalcogenides: strong coupling regime

Bishwajit Debnath, Yafis Barlas, Darshana Wickramaratne +2

Exciton condensation in an electron-hole bilayer system of monolayer transition metal dichalcogenides is analyzed at three different levels of theory to account for screening and q…

cond-mat.mes-hall2017★ 220 cited

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Yunqiu, Luo, Jinsong Xu +6

Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacke…

cond-mat.mtrl-sci2016★ 15 cited

Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure

Supeng Ge, K. M. Masum Habib, Amrit De +4

Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle of the h-BN with r…

cond-mat.mes-hall2013★ 26 cited

The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite

K. M. Masum Habib, Somaia S. Sylvia, Supeng Ge +2

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistan…