Thermoelectric properties of gapped bilayer graphene
arXiv:1810.02280 · doi:10.1088/1361-648X/ab2d0c
Abstract
Unlike in conventional semiconductors, both the chemical potential and the band gap in bilayer graphene (BLG) can be tuned via application of external electric field. Among numerous device implications, this property also designates BLG as a candidate for high-performance thermoelectric material. In this theoretical study we have calculated the Seebeck coefficients for abrupt interface separating weakly- and heavily-doped areas in BLG, and for a more realistic rectangular sample of mesoscopic size, contacted by two electrodes. For a given band gap () and temperature () the maximal Seebeck coefficient is close to the Goldsmid-Sharp value , the deviations can be approximated by the asymptotic expression , with the electron charge , the Boltzmann constant , and . Surprisingly, the effects of trigonal warping term in the BLG low-energy Hamiltonian are clearly visible at few-Kelvin temperatures, for all accessible values of meV. We also show that thermoelectric figure of merit is noticeably enhanced () when a rigid substrate suppresses out-of-plane vibrations, reducing the contribution from phonons to the thermal conductivity.
arXiv commentMinor revisions; notation clarified, a comment effective doping added. RevTeX; 9 pages; 5 figures
References in corpus (21)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Graphene Photonics and Optoelectronics
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Graphene plasmonics
- Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
- Cloning of Dirac fermions in graphene superlattices
- Asymmetry gap in the electronic band structure of bilayer graphene
- The electronic properties of bilayer graphene
- Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene
- Strong Coulomb drag and broken symmetry in double-layer graphene
- Determination of the gate-tunable bandgap and tight-binding parameters in bilayer graphene using infrared spectroscopy
- Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene
- Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
- Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene
- Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene
- Thermopower of gapped bilayer graphene
- Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
- Band Structure Mapping of Bilayer Graphene via Quasiparticle Scattering
- Tailoring supercurrent confinement in graphene bilayer weak links
- Lifshitz transition and thermoelectric properties of bilayer graphene
- Minimal conductivity and signatures of quantum criticality in ballistic graphene bilayer
Cited by in corpus (6)
- Evidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene
- Wiedemann-Franz law for massless Dirac fermions with implications for graphene
- Transport signatures of Van Hove singularities in mesoscopic twisted bilayer graphene
- Thermoelectric properties of the Corbino disk in graphene
- Conductivity scaling and the effects of symmetry-breaking terms in bilayer graphene Hamiltonian
- Sub-Sharvin conductance and incoherent shot-noise in graphene disks at magnetic field