Thermopower of gapped bilayer graphene

Abstract

We calculate thermopower of clean and impure bilayer graphene systems. Opening a band gap through the application of an external electric field is shown to greatly enhance the thermopower of bilayer graphene, which is more than four times that of the monolayer graphene and gapless bilayer graphene at room temperature. The effect of scattering by dilute charged impurities is discussed in terms of the self-consistent Born approximation. Temperature dependence of the thermopower is also analyzed.

8 pages, 5 figures; An inconsistency in the definitions of Eq.(17) and (18) in version 1 is found and corrected

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• Thermoelectric imaging of structural disorder in epitaxial graphene
• Anomalous growth of thermoelectric power in gapped graphene
• Effect of the edge states on the conductance and thermopower in Zigzag Phosphorene Nanoribbons
• Thermoelectric and thermal transport in bilayer graphene systems
• Enhancement of thermoelectric performance of a nanoribbon made of alpha-${\mathcal{T}}_3$ lattice
• Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face
• Thermopower of multilayer graphene
• Thermoelectric properties of gapped bilayer graphene
• Stacking-order dependence in thermoelectric transport of biased trilayer graphene
• Magnetothermoelectric transport properties in phosphorene
• High thermoelectric performance in excitonic bilayer graphene
• Large scale calculations of thermoelectric transport coefficients: a case study of γ-graphyne with point defects
• Thermoelectric properties of the Corbino disk in graphene
• Entropy and Seebeck signals meet on the edges
• Possible high thermoelectric power factor in alkali-metal-intercalated BC${}_3$: anisotropic multiple valleys originating from the van Hove singularity of graphene
• Enhancement of the thermoelectric properties in bilayer graphene structures induced by Fano resonances