Hall Coefficient of Dirac Fermions in Graphene under Charged Impurity Scatterings
arXiv:0904.0959 · doi:10.1103/PhysRevB.80.155423
Abstract
With a conserving formalism within the self-consistent Born approximation, we study the Hall conductivity of Dirac fermions in graphene under charged impurity scatterings. The calculated inverse Hall coefficient is compared with the experimental data. It is shown that the present calculations for the Hall coefficient and the electric conductivity are in good agreement with the experimental measurements.
4 pages, 4 figures
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Cited by in corpus (6)
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- Thermo-Electric Power of Dirac Fermions in Graphene
- A comprehensive study of electric, thermoelectric and thermal conductivities of Graphene with short range unitary and charged impurities
- Nernst effect of Dirac fermions in graphene under weak magnetic field
- Thermopower of multilayer graphene
- High energy shift in the optical conductivity spectrum of the bilayer graphene