Revisiting the measurement of the spin relaxation time in graphene-based devices
arXiv:1411.2949 · doi:10.1103/PhysRevB.91.241407
Abstract
A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method underestimates tausf if proper account of the spin absorption by contacts is lacking. By revisiting series of experimental results, we find that the corrected tausf are longer and less dispersed, which leads to a more unified picture of tausf derived from experiments. We also discuss how the correction depends on the parameters of the graphene and contacts.
References in corpus (21)
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Graphene Spintronics
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Spintronics and Pseudospintronics in Graphene and Topological Insulators
- Tunneling Spin Injection into Single Layer Graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Spin Injection and Detection in Magnetic Nanostructures
- Highly efficient spin transport in epitaxial graphene on SiC
- Spin Relaxation in Single Layer and Bilayer Graphene
- Non-collinear Magnetoelectronics
- Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
- Electronic spin transport in graphene field effect transistors
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
- Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
- Contact induced spin relaxation in Hanle spin precession measurements
- Role of MgO barriers for spin and charge transport in Co/MgO/graphene non-local spin-valve devices
- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
- Effect of contacts on spin lifetime measurements in graphene
- Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
- Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves
Cited by in corpus (23)
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- A two-dimensional spin field-effect transistor
- Spin transport in graphene/transition metal dichalcogenide heterostructures
- Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
- Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
- Spin precession in anisotropic media
- Contact Induced Spin Relaxation in Graphene Spin Valves with Al2O3 and MgO Tunnel Barriers
- Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
- Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport
- Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
- Spin relaxation in corrugated graphene
- Tunneling current-controlled spin states in few-layer van der Waals magnets
- Scaling behavior of spin transport in hydrogenated graphene
- Grounded Graphene-Based Nano-Waveguide with Chiral Cover and Substrate: New Theoretical Investigation
- Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
- Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
- Simulations on the influence of spatially-varying spin transport parameters on the measured spin lifetime in graphene non-local spin valves
- Spin absorption by in situ deposited nanoscale magnets on graphene spin valves
- Spin injection characteristics of Py/graphene/Pt by gigahertz and terahertz magnetization dynamics driven by femtosecond laser pulse
- A roadmap for the design of four-terminal spin valves and the extraction of spin diffusion length
- Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves