Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction
arXiv:1002.3665 · doi:10.1088/0953-8984/22/3/035301
Abstract
Electronic transport in a graphene-based ferromagnetic/normal/ferromagnetic junction is investigated by means of Landauer-Büttiker formulism and the nonequilibrium Green's function technique. For the zigzag edge case, the results show that the conductance is always larger than for the parallel configuration of lead magnetizations, but for the antiparallel configuration the conductance becomes zero because of the band-selective rule. So a magnetoresistance (MR) plateau emerges with the value 100% when the Fermi energy is located around the Dirac point. Besides, choosing narrower graphene ribbons can obtain the wider 100% MR plateaus and the length change of the central graphene region does not affect the 100% MR plateaus. Although the disorder will reduce the MR plateau, the plateau value can be still kept about 50% even in a large disorder strength case. In addition, when the magnetizations of the left and right leads have a relative angle, the conductance changes as a cosine function of the angle. What is more, for the armchair edge case, the MR is usually small. So, it is more favorable to fabricate the graphene-based spin valve device by using the zigzag edge graphene ribbon.
15 pages, 9 figures
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- Electronic transport through a silicene-based zigzag and armchair junction
- Non-collinear Andreev reflections in semiconductor nanowires
- Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads
- Magneto-transport in impurity-doped few-layer graphene spin valve
- Time-dependent magneto-transport in a driven graphene spin valve