First order ferromagnetic phase transition in the low electronic density regime of a biased graphene bilayer

Abstract

The phase diagram of a biased graphene bilayer is computed and the existence of a ferromagnetic phase is discussed both in the critical on-site interaction $U_c$ versus doping density and versus temperature. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other. We give evidence for a \emph{first-order} phase transition between paramagnetic and ferromagnetic phases induced by doping at zero temperature.

19 pages, 7 figures; detailed presentation of the calculations done in Phys. Rev. Lett. 100, 186803 (2008)

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Gate-induced insulating state in bilayer graphene devices
• Disorder Induced Localized States in Graphene
• Low density ferromagnetism in biased bilayer graphene
• Electron-electron interaction and charging effects in graphene quantum dots
• Interactions and magnetism in graphene boundary states
• Weak ferromagnetism and spiral spin structures in honeycomb Hubbard planes