Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

Abstract

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

5 pages, 4 figures

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• Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
• Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study
• Band gaps in incommensurable graphene on hexagonal boron nitride
• What Makes Effective Gating Possible in Two-Dimensional Heterostructures?
• Light from van der Waals quantum tunneling devices
• Enhancing near-field heat transfer between composite structures through strongly-coupled surface modes
• Phonons and electron-phonon coupling in graphene-h-BN heterostructures
• Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations
• Large potential steps at weakly interacting metal-insulator interfaces
• Anisotropic hybrid excitation modes in monolayer and double-layer phosphorene on polar substrates
• First-principles study of magnetism and electric field effects in 2D systems
• Plasmonic polarization sensing of electrostatic superlattice potentials
• Anisotropic charge density wave in electron-hole double monolayers: Applied to phosphorene
• A DFT Study on the Electronic Structure of In-Plane Heterojunctions of Graphene and Hexagonal Boron Nitride Nanoribbons