Coupled spin and valley Hall effects driven by coherent tunneling
arXiv:2409.17611 · doi:10.1103/PhysRevB.111.075418
Abstract
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the pseudospin in the tunneling process, the transmitted electrons acquire a finite spin- and valley-dependent backreflection geometric phase when the two interfaces of the barrier are asymmetric. This results in a spin- and valley-dependent skew coherent tunneling, which is responsible for the transverse spin and valley Hall currents. We further demonstrate that the coherent-tunneling assisted charge-spin and charge-valley conversions are highly efficient with large Hall angles. Our work provides a new route for the generation of efficient spin and valley Hall effects, suggesting potential applications for spintronic and valleytronic devices.
9 pages, 5 figures
References in corpus (33)
- Spintronics: Fundamentals and applications
- Berry Phase Effects on Electronic Properties
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Anomalous Hall effect
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Universal Intrinsic Spin-Hall Effect
- Excitons in atomically thin transition metal dichalcogenides
- The Valley Hall Effect in MoS2 Transistors
- Andreev reflection and Klein tunneling in graphene
- Boundary conditions for Dirac fermions on a terminated honeycomb lattice
- Intrinsic spin Hall effect in platinum metal
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Giant and tunable valley degeneracy splitting in MoTe2
- Berry phase, hyperorbits, and the Hofstadter spectrum
- Klein Backscattering and Fabry-Perot Interference in Graphene Heterojunctions
- Observation of the inverse spin Hall effect in silicon
- Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS
- Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
- Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor
- Extrinsic spin Hall effect induced by resonant skew scattering in graphene
- Berry Phase and Pseudospin Winding Number in Bilayer Graphene
- Band Topology, Orbital Phase Winding, and Selection Rules in Excitonic Physics in Two Dimensions
- Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene
- Valley-dependent spin transport in monolayer transition-metal dichalcogenides
- Tunneling Planar Hall Effect in Topological Insulators: Spin-Valves and Amplifiers
- Interferences in quantum eraser reveal geometric phases in modular and weak values
- Proximity effects in graphene on monolayers of transition-metal phosphorus trichalcogenides MPX
- Perfect crossed Andreev reflection in the proximitized graphene/superconductor/proximitized graphene junctions
- Geometric phase at graphene edge
- Influence of interface-induced valley-Zeeman and spin-orbit couplings\\ on transport in graphene-on-WSe heterostructures
- Spin-valley dependent double Andreev reflections in the proximitized graphene/superconductor junction
- Local and Tunable Geometric Phase of Dirac Fermions in a Topological Junction
- Tunneling chirality Hall effect in type-I Weyl semimetals