Tunneling spin-galvanic effect

Abstract

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.

3 pages, 2 figures

References in corpus (2)

• Non-magnetic semiconductor spin transistor
• Detection of electrical spin injection by light-emitting diodes in top- and side-emission configuration

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