Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions

Abstract

We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.

arXiv comment6 pages, 3 figures, conference MIMS 2017 Moscow (submitted), Journal of Magnetism and Magnetic Materials (JMMM), 2017

References in corpus (16)

• Universal Intrinsic Spin-Hall Effect
• Magnetic switching by spin torque from the spin Hall effect
• Direct electronic measurement of the spin Hall effect
• Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
• Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures
• Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces
• Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
• Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers
• Spin-dependent tunnelling through a symmetric barrier
• Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator
• Electrical detection of magnetization reversal without auxiliary magnets
• Spin-orbit splitting of valence subbands in semiconductor nanostructures
• Tunneling spin-galvanic effect
• Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition
• Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces
• Spin injection via (110)-grown semiconductor barriers

Cited by in corpus (3)

• Skew Andreev reflection in ferromagnet/superconductor junctions
• Anomalous Josephson Hall effect charge and transverse spin currents in superconductor/ferromagnetic insulator/superconductor junctions
• Spin to charge conversion at Rashba-split SrTiO${}_3$ interfaces from resonant tunneling