activity
20032023
most citedAnisotropic Magneto-Thermopower: the Contribution of Interband Relaxation

35 citations · 159 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2023

Electron irradiation: from test to material tailoring

A. Alessi, O. Cavani, R. Grasset +3

In this article, we report some examples of how high-energy electron irradiation can be used as a tool for shaping material properties turning the generation of point-defects into…

cond-mat.mes-hall2021

Spin injection efficiency at metallic interfaces probed by THz emission spectroscopy

Jacques Hawecker, T. H. Dang, Enzo Rongione +12

Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic inter…

cond-mat.mtrl-sci2017★ 6 cited

Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions

T. Huong Dang, D. Quang To, E. Erina +4

We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical spin model, we show that, when Dresselh…

cond-mat.mes-hall2015★ 17 cited

Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces

T. Huong Dang, H. Jaffrès, T. L. Hoai Nguyen +1

We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving s…

cond-mat.mes-hall2013★ 34 cited

Anisotropic magneto-thermal transport and Spin-Seebeck effect

J. -E. Wegrowe, H. -J. Drouhin, D. Lacour

The angular dependence of the thermal transport in insulating or conducting ferromagnets is derived on the basis of the Onsager reciprocity relations applied to a magnetic system.…

cond-mat.mes-hall2013★ 15 cited

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

G. M. Vanacore, M. Chaigneau, N. Barrett +16

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are latera…