Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation
arXiv:cond-mat/0508200 · doi:10.1103/PhysRevB.73.134422
Abstract
Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expression of the thermopower is derived and compared with the expression for the thermopower produced by the GMR. First measurements of anisotropic magnetothermopower are presented in electrodeposited Ni nanowires contacted with Ni, Au and Cu. The results of this study show that while the giant magnetoresistance and corresponding thermopower demonstrates the role of spin-flip scattering, the observed anisotropic magnetothermopower indicates interband s-d relaxation mechanisms.
20 pages, 4 figures
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Cited by in corpus (8)
- Systematic Investigation of Anisotropic Magneto-Peltier Effect and Anomalous Ettingshausen Effect in Ni Thin Films
- Spin-mediated charge-to-heat current conversion phenomena in ferromagnetic binary alloys
- Anisotropic Hanle lineshape via anisotropic magnetothermoelectric phenomena
- First-principles study of the anisotropic magneto-Peltier effect
- Spin-transfer in an open ferromagnetic layer: from negative damping to effective temperature
- Spin-Currents and Spin-Pumping Forces for Spintronics
- Magnetization reversal driven by spin-injection : a mesoscopic spin-transfer effect
- Spin Transfer from the point of view of the ferromagnetic degrees of freedom