Electrical detection of magnetization reversal without auxiliary magnets
arXiv:1506.00400 · doi:10.1103/PhysRevB.91.180402
Abstract
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)As epilayer is set either parallel or antiparallel to a current-induced non-equilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2\% at current density of A cm.
arXiv comment5 pages, 4 figures
References in corpus (14)
- Spin torque switching with the giant spin Hall effect of tantalum
- Universal Intrinsic Spin-Hall Effect
- Dissipationless Quantum Spin Current at Room Temperature
- Spin Transfer Torques
- Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
- Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect
- Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field
- Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers
- Current induced electron spin polarization in strained semiconductors
- Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
- Magneto-gyrotropic effects in semiconductor quantum wells (review)
- Piezo-Magneto-Electric Effects in p-Doped Semiconductors
- Disentangling relativistic spin torques in a ferromagnet/semiconductor bilayer
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