Theory of bilinear magneto-electric resistance from topological-insulator surface states
arXiv:1808.06339 · doi:10.1117/12.2323126
Abstract
We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we name it bilinear magneto-electric resistance (BMER). We show that the sign and the magnitude of the BMER depends sensitively on the orientation of the current with respect to the magnetic field as well as the crystallographic axes -- a property that can be utilized to map out the spin texture of the topological surface states via simple transport measurement, alternative to the angle-resolved photoemission spectroscopy (ARPES).
12 pages, single column, 3 figures
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Cited by in corpus (10)
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- Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires
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- Bulk and surface spin conductivity in topological insulators with hexagonal warping
- Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states
- Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator
- Intrinsic Contribution to Non-linear Thermoelectric Effect
- Electrical Magnetochiral current in Tellurium
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