Intrinsic magnetoresistance in metal films on ferromagnetic insulators
arXiv:1407.3571 · doi:10.1103/PhysRevB.90.161412
Abstract
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance by its dependence on the metal film thickness.
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Cited by in corpus (16)
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- Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators
- Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces
- Current-induced spin torque resonance of magnetic insulators affected by field-like spin-orbit torques and out-of-plane magnetizations
- Spin Hall noise
- Spin-orbit torques and magnetotransport properties of -Sn and -Sn heterostructures
- Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO/SrTiO interface
- Experimental evidence of spin-orbit torque from metallic interfaces
- Giant interfacial spin-Hall angle from Rashba-Edelstein effect revealed by the spin-Hall Hanle processes
- Quantum unidirectional magnetoresistance
- Inverse Ising effect and Ising magnetoresistance
- Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures
- Microscopic theory of Rashba-Edelstein magnetoresistance
- Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure