Domain wall motion governed by the spin Hall effect

Abstract

Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a novel class of data, memory, and logic devices. In this letter, we propose the spin Hall effect as a radically new mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by small fields along the nanowire. This new manifestation of CIDWM offers a very attractive new degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.

References in corpus (5)

• Spin torque switching with the giant spin Hall effect of tantalum
• Magnetic switching by spin torque from the spin Hall effect
• High domain wall velocities induced by current in ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy
• The domain wall spin torque-meter
• Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect

Cited by in corpus (171)

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• Bulk and interface spin-orbit torques in Pt/Co/MgO thin film structures
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• A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance
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• Voltage-Induced Inertial Domain Wall Motion in an Antiferromagnetic Nanowire
• Control of field- and current-driven magnetic domain wall motion by exchange-bias in Cr2O3/Co/Pt trilayers
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