Anatomy of Type-X Spin-Orbit Torque Switching
arXiv:2108.01272
Abstract
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and better-performance SOT magnetoresistive random access memory (SOT-MRAM) as compared to the conventional type-y design. Here, we systematically investigate type-x SOT switching properties by both macrospin and micromagnetic simulations. The out-of-plane external field and anisotropy field dependence of the switching current density () is first examined in the ideal type-x configuration. Next, we study the FM layer canting angle () dependence of through macrospin simulations and experiments, which show a transformation of switching dynamics from type-x to type-y with increasing . By further integrating field-like torque (FLT) into the simulated system, we find that a positive FLT can assist type-x SOT switching while a negative one brings about complex dynamics. More crucially, with the existence of a sizable FLT, type-x switching mode results in a lower critical switching current than type-y at current pulse width less than ~ 10 ns, indicating the advantage of employing type-x design for ultrafast switching using materials systems with FLT. Our work provides a thorough examination of type-x SOT scheme with various device/materials parameters, which can be informative for designing next-generation SOT-MRAM.
References in corpus (22)
- Spin torque switching with the giant spin Hall effect of tantalum
- The design and verification of Mumax3
- Magnetic switching by spin torque from the spin Hall effect
- Current-driven dynamics of chiral ferromagnetic domain walls
- Domain wall motion governed by the spin Hall effect
- Spin-orbit torques induced by interface-generated spin currents
- Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces
- Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers
- Field-free magnetization reversal by spin-Hall effect and exchange bias
- Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices
- Stochastic p-bits for Invertible Logic
- Electric-field control of spin-orbit torque in a magnetically doped topological insulator
- Spectral Characteristics of the Microwave Emission by the Spin Hall Nano-Oscillator
- Comparison of spin-orbit torques and spin pumping across NiFe/Pt and NiFe/Cu/Pt interfaces
- Deterministic magnetization switching using lateral spin-orbit torque
- On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures
- Origins of the unidirectional spin Hall magnetoresistance in metallic bilayers
- Field-free spin-orbit torque switching from geometrical domain wall pinning
- All-optical Detection of Spin Hall Angle in W/CoFeB/SiO2 Heterostructures by Varying Tungsten Layer Thickness
- Field-free spin-orbit torque switching through domain wall motion
- Determination of spin-orbit torque efficiencies in heterostructures with in-plane magnetic anisotropy
- Switching induced by spin Hall effect in an in-plane magnetized ferromagnet with the easy axis parallel to the current