Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices

Abstract

We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

References in corpus (4)

• Dissipationless Quantum Spin Current at Room Temperature
• Direct electronic measurement of the spin Hall effect
• Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices
• Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

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