Gate voltage modulation of spin-Hall-torque-driven magnetic switching
arXiv:1209.0962
Abstract
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.
References in corpus (13)
- Spin torque switching with the giant spin Hall effect of tantalum
- Spin Hall effect
- Microwave Oscillations of a Nanomagnet Driven by a Spin-Polarized Current
- Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
- Magnetic switching by spin torque from the spin Hall effect
- Spin Transfer Torques
- Spin Torque Ferromagnetic Resonance Induced by the Spin Hall Effect
- Room Temperature Reversible Spin Hall Effect
- Surface Magnetoelectric Effect in Ferromagnetic Metal Films
- Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices
- Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
- Cross-point architecture for spin transfer torque magnetic random access memory
- Digital logic using 3-terminal spin transfer torque devices