Voltage control of frequency, effective damping and threshold current in nano-constriction-based spin Hall nano-oscillators
arXiv:2210.01042 · doi:10.1063/5.0128786
Abstract
Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), 200 kJ/m, and gate width, 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin Hall nano-oscillators. The VCMA modifies the local magnetic properties such that the magnetodynamics transitions between regimes of \emph{i}) confinement, \emph{ii}) tuning, and \emph{iii}) separation, with qualitatively different behavior. We find that the strongest tuning is achieved for gate widths of the same size as the the constriction width, for which the effective damping can be increased an order of magnitude compared to its intrinsic value. As a consequence, voltage control remains efficient over a very large frequency range, and subsequent manufacturing advances could allow SHNOs to be easily integrated into next-generation electronics for further fundamental studies and industrial applications.
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Cited by in corpus (4)
- Spin wave-driven variable-phase mutual synchronization in spin Hall nano-oscillators
- Phase noise analysis of mutually synchronized spin Hall nano-oscillators
- Large Non-Volatile Frequency Tuning of Spin Hall Nano-Oscillators using Circular Memristive Nano-Gates
- Mutual synchronization in spin torque and spin Hall nano-oscillators