Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices
arXiv:2009.02887 · doi:10.35848/1882-0786/abd598
Abstract
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices.
arXiv comment17 pages, 5 figures
References in corpus (12)
- Spin torque switching with the giant spin Hall effect of tantalum
- Ultrafast magnetization switching by spin-orbit torques
- Thermally assisted magnetization reversal in the presence of a spin-transfer torque
- Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices
- Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect
- Ultra-fast perpendicular Spin Orbit Torque MRAM
- Thermally activated switching of perpendicular magnet by spin-orbit spin torque
- Critical current destabilizing perpendicular magnetization by the spin Hall effect
- Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
- Instability analysis of spin torque oscillator with an in-plane magnetized free layer and a perpendicularly magnetized pinned layer
- Theoretical condition for switching the magnetization in a perpendicularly magnetized ferromagnet via the spin Hall effect
- Switching induced by spin Hall effect in an in-plane magnetized ferromagnet with the easy axis parallel to the current
Cited by in corpus (4)
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- Influence of magnetic fields on the performance of spin-orbit torque magnetic random-access memory