188 citations · 610 across the 14 of their papers we have counts for
14 papers
Reduction of back switching by large damping ferromagnetic material
Tomohiro Taniguchi, Yohei Shiokawa, Tomoyuki Sasaki
Recent studies on magnetization dynamics induced by spin-orbit torque have revealed a weak dependence of the critical current for magnetization switching on the damping constant of…
Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices
Yohei Shiokawa, Eiji Komura, Yugo Ishitani +5
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properti…
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H. Koike, S. Lee, R. Ohshima +7
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger loc…
Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
Takayuki Tahara, Yuichiro Ando, Makoto Kameno +7
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegener…
Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature
Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno +5
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room te…
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…