188 citations · 610 across the 14 of their papers we have counts for
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Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
Takayuki Tahara, Yuichiro Ando, Makoto Kameno +7
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegener…
Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature
Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno +5
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room te…
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Tomoyuki Sasaki, Toshio Suzuki, Yuichiro Ando +4
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in larg…
An investigation of the inverted Hanle effect in highly-doped Si
Yasunori Aoki, Makoto Kameno, Yuichiro Ando +7
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature.…
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…