Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Abstract

An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers. The asymmetric MR linearly increases with current density up to a threshold, and increases more rapidly above the threshold. To reveal the origin of threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of asymmetric MR.

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• Theory of bilinear magneto-electric resistance from topological-insulator surface states
• Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime
• Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance
• Nonlinear longitudinal and transverse magnetoresistances due to current-induced magnon creation-annihilation processes
• Disentangle magnon magnetoresistance from anisotropic and spin Hall magnetoresistance in NiFe/Pt bilayers
• Estimation of spin-orbit torques in the presence of current-induced magnon creation and annihilation
• Roles of Electron-Magnon Cross Diffusion in Unidirectional Magnetoresistance of Metallic Magnetic Bilayers