Domain-wall-controlled transverse spin injection

Abstract

We propose an effect whereby an electric current along the interface between a ferromagnetic and normal metal leads to injection of pure spin current into the normal metal, if the magnetization-direction in the ferromagnet varies along the direction of current. For the specific example of a ferromagnetic domain wall, we compute the inverse spin-Hall effect voltage this spin current gives rise to when injected into a Pt layer. Furthermore, we show that this pure spin current leads to modification of the parameters that govern spin transfer and current-driven domain-wall motion, which can be use to optimize the latter in layered magnetic systems. This effect in principle enables control over the location of spin-current injection in devices.

References in corpus (6)

• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Dissipationless Quantum Spin Current at Room Temperature
• Platinum thickness dependence of the inverse spin-Hall voltage from spin pumping in a hybrid YIG/Pt system
• Generating Spin Currents in Semiconductors with the Spin Hall Effect
• The domain wall spin torque-meter
• Inelastic scattering in ferromagnetic and antiferromagnetic metal spintronics

Cited by in corpus (4)

• Magnon-drag thermopower and Nernst coefficient in Fe, Co, and Ni
• Intrinsic magnetoresistance in metal films on ferromagnetic insulators
• Phenomenology of current-skyrmion interactions in thin films with perpendicular magnetic anisotropy
• Spin filtering in a magnetic barrier structure: in-plane spin orientation