Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator

Abstract

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

arXiv commentTypos in Fig. 4 caption and Ref. [27] were corrected in this version

References in corpus (17)

• Topological Insulators
• Topological insulators and superconductors
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• Nonlinear planar Hall effect
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• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
• Theory of bilinear magneto-electric resistance from topological-insulator surface states

Cited by in corpus (5)

• Quantum kinetic theory of quadratic responses
• Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport
• Unidirectional Seebeck effect from Rashba spin-orbit coupling on the subsurface of Ge(111)
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States
• Coexistence of Rashba and Dirac dispersions on the surface of centrosymmetric topological insulator decorated with transition metals