Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator

Abstract

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

Typos in Fig. 4 caption and Ref. [27] were corrected in this version

References in corpus (8)

• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Emergent quantum confinement at topological insulator surfaces
• Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
• Nonlinear planar Hall effect
• Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems
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• The Rashba Scale: Emergence of Band Anti-Crossing as a Design Principle for Materials with Large Rashba coefficient
• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy

Cited by in corpus (5)

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• Coexistence of Rashba and Dirac dispersions on the surface of centrosymmetric topological insulator decorated with transition metals