Piezo-Magneto-Electric Effects in p-Doped Semiconductors
arXiv:cond-mat/0408476 · doi:10.1103/PhysRevB.72.033203
Abstract
We predict the appearance of a uniform magnetization in strained three dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.
4 pages, 3 figures