Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect

Abstract

Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67. R201304 (2003) and Phys. Rev. Lett. 93. 056601 (2004)), it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.

arXiv comment10 pages, 5 figures, to appear in PRB

References in corpus (4)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Spin-dependent tunnelling through a symmetric barrier
• Tunneling spin-galvanic effect

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• Comments on "Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect"
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