95 citations · 210 across the 8 of their papers we have counts for
9 papers
Molecular Beam Epitaxy of a Half-Heusler Topological Superconductor Candidate YPtBi
Jiwoong Kim, Kajetan M. Fijalkowski, Johannes Kleinlein +6
The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi ap…
Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb
L. Scheffler, J. Werther, K. Gas +5
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented.…
Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
Lukas Scheffler, Katarzyna Gas, Sanjib Banik +8
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The…
CdTe-HgTe core-shell nanowire growth controlled by RHEED
M. Kessel, J. Hajer, G. Karczewski +4
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two…
Kinetic limitation of chemical ordering in BiTeSe layers grown by molecular beam epitaxy
S. Schreyeck, K. Brunner, A. Kirchner +7
We study the chemical ordering in BiTeSe grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and deter…
Suppressing twin formation in Bi2Se3 thin films
N. V. Tarakina, S. Schreyeck, M. Luysberg +8
The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been…
Control of the in-plane anisotropy in off-stoichiometric NiMnSb
Felicitas Gerhard, Claus Schumacher, Charles Gould +1
NiMnSb is a ferromagnetic half-metal which, because of its rich anisotropy and very low Gilbert damping, is a promising candidate for applications in information technologies. We h…
Removal of GaAs growth substrates from II-VI semiconductor heterostructures
S. Bieker, P. Hartmann, T. Kießling +5
We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The…
Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
S. Schreyeck, N. V. Tarakina, G. Karczewski +7
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction…