Quantum Transport and Potential of Topological States for Thermoelectricity in Bi${}_2$Te${}_3$ Thin Films

Abstract

This paper reviews recent developments in quantum transport and it presents recent efforts to explore the contribution of topological insulator boundary states to thermoelectricity in Bi${}_2$Te${}_3$ thin films. Although Bi${}_2$Te${}_3$ has been used as a thermoelectric material for many years, it is only recently that thin films of this material have been synthesized as 3D topological insulators with interesting physics and potential applications related to topologically protected surface states. A major bottleneck in Bi${}_2$Te${}_3$ thin films has been eliminating its bulk conductivity while increasing its crystal quality. The ability to grow epitaxial films with high crystal quality and to fabricate sophisticated Bi${}_2$Te${}_3$-based devices is attractive for implementing a variety of topological quantum devices and exploring the potential of topological states to improve thermoelectric properties. Special emphasis is laid on preparing low-defect-density Bi${}_2$Te${}_3$ epitaxial films, gate-tuning of normal-state transport and Josephson supercurrent in topological insulator/superconductor hybrid devices. Prospective quantum transport experiments on Bi${}_2$Te${}_3$ thin-film devices are discussed as well. Finally, an overview of current progress on the contribution of topological insulator boundary states to thermoelectricity is presented. Future explorations to reveal the potential of topological states for improving thermoelectric properties of Bi${}_2$Te${}_3$ films and realizing high-performance thermoelectric devices are discussed.

Topical Review Article, 12 figures

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