activity
20162020
most citedHigh-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO/SrZrO heterostructures

21 citations · 48 across the 3 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci202012 cited

Inelastic Electron Tunneling Spectroscopy at High-Temperatures

Prosper Ngabonziza, Yi Wang, Peter A. van Aken +2

Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of…

cond-mat.mtrl-sci2020

Fermi surface and kink structures in SrRuO revealed by synchrotron-based ARPES

Prosper Ngabonziza, Emanuela Carleschi, Volodymyr Zabolotnyy +7

The low-energy electronic structure, including the Fermi surface topology, of the itinerant metamagnet SrRuO is investigated for the first time by synchrotron-ba…

cond-mat.mtrl-sci201915 cited

Josephson Effect and Charge Distribution in Thin BiTe Topological Insulators

Martin P. Stehno, Prosper Ngabonziza, Hiroaki Myoren +1

Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To unders…

cond-mat.mtrl-sci201921 cited

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO/SrZrO heterostructures

Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle +4

By inserting a SrZrO buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement…

cond-mat.mes-hall2016

Gate-tunable transport properties of in-situ capped BiTe topological insulator thin films

Prosper Ngabonziza, Martin P. Stehno, Hiroaki Myoren +3

Combining the ability to prepare high-quality, intrinsic BiTe topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pron…