High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures

Abstract

By inserting a SrZrO${}_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO${}_3$ films. A room temperature mobility of 140 cm${}^2$ V${}^{-1}{\text{s}}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^9$ cm${}^{-2}$ for buffered films prepared on (110) TbScO${}_3$ substrates by pulsed laser deposition.

5 pages, 4 figures

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Cited by in corpus (5)

• Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films
• One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
• Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO${}_3$
• Employing High-temperature-grown SrZrO${}_3$ Buffer to Enhance the Electron Mobility in La:BaSnO${}_3$-based Heterostructures
• Combined Spectroscopy and Electrical Characterization of La:BaSnO${}_{\text{3}}$ Thin Films and Heterostructures