High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures

Abstract

By inserting a SrZrO${}_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO${}_3$ films. A room temperature mobility of 140 cm${}^2$ V${}^{-1}{\text{s}}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^9$ cm${}^{-2}$ for buffered films prepared on (110) TbScO${}_3$ substrates by pulsed laser deposition.

5 pages, 4 figures

References in corpus (4)

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• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Transparent perovskite barium stannate with high electron mobility and thermal stability
• Electronic and Structural Properties of a 4d-Perovskite: Cubic Phase of SrZrO${}_3$