Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO${}_3$

Abstract

This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO${}_3$. It presents current efforts in the synthesis science of epitaxial La:BaSnO${}_3$ films for achieving reduced defect densities and high electron mobility at room temperature. We discuss the scattering mechanisms and the route towards engineering defect-free epitaxial La:BaSnO${}_3$ heterostructures. By combining chemical surface characterization and electronic transport studies, a special emphasis is laid on the proper correlation between the transport properties and the electronic band structure of La:BaSnO${}_3$ films and heterostructures. For application purposes, interesting optical properties of La:BaSnO${}_3$ films are discussed. Finally, for their potential application in oxide electronics, an overview of current progress in the fabrication of La:BaSnO${}_3$-based thin-film field-effect transistors is presented together with recent progress in the the fundamental realization of two-dimensional electron gases with high electron mobility in La:BaSnO${}_3$-based heterostructures. Future experimental studies to reveal the potential deployment of La:BaSnO${}_3$ films in optoelectronic and transparent electronics are also discussed.

45 pages, 17 figures

References in corpus (13)

• High Mobility in a Stable Transparent Perovskite Oxide
• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Transparent perovskite barium stannate with high electron mobility and thermal stability
• Origin of the Superior Conductivity of Perovskite Ba(Sr)SnO3
• Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
• Tuning Optical Properties of Transparent Conducting Barium Stannate by Dimensional Reduction
• One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
• A consistent picture of excitations in cubic BaSnO${}_3$ revealed by combining theory and experiment
• High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures
• Tuning two-dimensional electron (hole) gases at LaInO${}_3$/BaSnO${}_3$ interfaces: Impact of polar distortions, termination, and thickness
• Inelastic Electron Tunneling Spectroscopy at High-Temperatures
• $\sqrt{2}$$\times$$\sqrt{2}R45^{\circ }$ surface reconstruction and electronic structure of BaSnO${}_3$ film
• Employing High-temperature-grown SrZrO${}_3$ Buffer to Enhance the Electron Mobility in La:BaSnO${}_3$-based Heterostructures