High Mobility in a Stable Transparent Perovskite Oxide

Abstract

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm^2(Vs)^-1 at a doping level of 4.4x10^20 cm^-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 Deg. C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

15 pages, 3 figures

Cited by in corpus (47)

• Wide band gap chalcogenide semiconductors
• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Transparent perovskite barium stannate with high electron mobility and thermal stability
• Origin of the Superior Conductivity of Perovskite Ba(Sr)SnO3
• Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions
• First-principles analysis of electron transport in BaSnO${}_3$
• The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter
• Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO${}_3$
• Topological defects at octahedral tilting plethora in bi-layered perovskites
• Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3
• First-principles study of the mobility of SrTiO${}_3$
• Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing
• Machine Learning Analysis of Perovskite Oxides Grown by Molecular Beam Epitaxy
• 2DEGs at perovskite interfaces between KTaO3 or KNbO3 and stannates
• Thermopower modulation clarification of the intrinsic effective mass in a transparent oxide semiconductor, BaSnO3
• Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films
• Phonon-assisted optical absorption in BaSnO${}_3$ from first principles
• Octahedral tilting induced ferroelectricity in the ASnO${}_3$/BSnO${}_3$ superlattice
• Tuning Optical Properties of Transparent Conducting Barium Stannate by Dimensional Reduction
• One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
• Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO${}_3$, BaSnO${}_3$ and SrTiO${}_3$
• Direct observation and consequences of dopant segregation inside and outside dislocation cores in perovskite BaSnO3
• Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
• A consistent picture of excitations in cubic BaSnO${}_3$ revealed by combining theory and experiment
• Separating Electrons and Donors in BaSnO3 via Band Engineering
• High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures
• A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
• Sn(II)-containing phosphates as optoelectronic materials
• Tuning two-dimensional electron (hole) gases at LaInO${}_3$/BaSnO${}_3$ interfaces: Impact of polar distortions, termination, and thickness
• Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations
• The role of the interface in controlling the epitaxial relationship between orthorhombic ${\text{LaInO}}_{\text{3}}$ and cubic ${\text{BaSnO}}_{\text{3}}$
• Single crystal growth and characterization of Ba${}_2$ScNbO${}_6$ -- a novel substrate for BaSnO${}_3$ films
• Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO${}_3$
• Optical and electronic properties in amorphous BaSnO3 thin films
• Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films
• Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films
• Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm${}^2$/Vs at a perovskite oxide interface
• Velocity Saturation in La-doped BaSnO3 Thin Films
• Fingerprints of optical absorption in the perovskite LaInO${}_3$: Insight from many-body theory and experiment
• $\sqrt{2}$$\times$$\sqrt{2}R45^{\circ }$ surface reconstruction and electronic structure of BaSnO${}_3$ film
• Employing High-temperature-grown SrZrO${}_3$ Buffer to Enhance the Electron Mobility in La:BaSnO${}_3$-based Heterostructures
• Low-loss tunable infrared plasmons in the high-mobility perovskite (Ba,La)SnO${}_3$
• Combined Spectroscopy and Electrical Characterization of La:BaSnO${}_{\text{3}}$ Thin Films and Heterostructures
• Critical role of terminating layer in formation of 2DEG state at the $LaIn{O}_3$/$BaSn{O}_3$ interface
• Identifying candidate hosts for quantum defects via data mining
• Surface state at $BaSn{O}_3$ evidenced by angle-resolved photoemission spectroscopy and ab initio calculations
• Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior