Transparent perovskite barium stannate with high electron mobility and thermal stability

Abstract

Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability at room temperature. This article reviews recent progress in the doped BaSnO3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.

arXiv comment70 pages, 14 figures, 1 table

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Cited by in corpus (20)

• Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3
• Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing
• Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films
• One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
• Strain Tuning of Plasma Frequency in Vanadate, Niobate, and Molybdate Perovskite Oxides
• A consistent picture of excitations in cubic BaSnO${}_3$ revealed by combining theory and experiment
• Separating Electrons and Donors in BaSnO3 via Band Engineering
• High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures
• A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
• Tuning two-dimensional electron (hole) gases at LaInO${}_3$/BaSnO${}_3$ interfaces: Impact of polar distortions, termination, and thickness
• Single crystal growth and characterization of Ba${}_2$ScNbO${}_6$ -- a novel substrate for BaSnO${}_3$ films
• Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO${}_3$
• Optical and electronic properties in amorphous BaSnO3 thin films
• $\sqrt{2}$$\times$$\sqrt{2}R45^{\circ }$ surface reconstruction and electronic structure of BaSnO${}_3$ film
• Employing High-temperature-grown SrZrO${}_3$ Buffer to Enhance the Electron Mobility in La:BaSnO${}_3$-based Heterostructures
• Low-loss tunable infrared plasmons in the high-mobility perovskite (Ba,La)SnO${}_3$
• Combined Spectroscopy and Electrical Characterization of La:BaSnO${}_{\text{3}}$ Thin Films and Heterostructures
• Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
• Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO${}_3$
• Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior