High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives

Abstract

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.

4 pages, 4 figures. Accepted for publication in Phys. Rev. Lett

References in corpus (7)

• Why Some Interfaces Cannot be Sharp
• The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Low temperature metallic state induced by electrostatic carrier doping of SrTiO${}_3$
• Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization
• Full oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor
• Electronic conductivity and structural distortion at the interface between insulators SrTiO3 and LaAlO3

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