Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

Abstract

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

Advanced Functional Materials (2013)

References in corpus (10)

• Magnetic effects at the interface between nonmagnetic oxides
• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
• Instability, Intermixing and Electronic Structure at the Epitaxial LaAlO3/SrTiO3(001) Heterojunction
• Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces
• Shubnikov-de Haas oscillations in SrTiO3\LaAlO3 interface
• Prediction of thickness limits of ideal polar ultrathin films
• Structure-Property Relation of SrTiO3-LaAlO3 Interfaces
• Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Cited by in corpus (34)

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• A high-mobility electronic system at an electrolyte-gated oxide surface
• Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
• Gate-tunable band structure of the LaAlO${}_3$-SrTiO${}_3$ interface
• The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces
• Nanoscale Electrostatic Control of Oxide Interfaces
• Growth-induced electron mobility enhancement at the LaAlO${}_3$/SrTiO${}_3$ interface
• Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities
• Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
• Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system
• Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States
• Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers
• High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities
• Pair breaking in multi-orbital superconductors: an application to oxide interfaces
• High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
• Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering
• Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering
• Deterministic influence of substrate-induced oxygen vacancy diffusion on $B{i}_{2}W{O}_6$ thin film growth
• The Conducting Channel at the LaAlO${}_3$/SrTiO${}_3$ Interface
• Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO${}_3$-SrTiO${}_3$ Interface
• Universality of Electron Mobility in LaAlO${}_3$/SrTiO${}_3$ and bulk SrTiO${}_3$
• Long-range electronic reconstruction to a $d_{xz,yz}$-dominated Fermi surface below the LaAlO${}_3$/SrTiO${}_3$ interface
• Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
• Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems
• Transport and thermoelectric properties of the LaAlO${}_3$/SrTiO${}_3$ interface
• Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers
• Effect of oxygen vacancy on structural, electronic and magnetic properties of La-based oxide interfaces
• Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO${}_3$-based interfaces
• Cooper Pair Writing at the LaAlO3/SrTiO3 Interface
• Leveraging high fluence and low pressure for pulsed laser deposition of high-mobility $\gamma$-Al${}_2$O${}_3$/SrTiO${}_3$ heterostructure growth
• Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping