Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

Abstract

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.

arXiv comment10 pages, 3 figures

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• Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout
• Proximity effects in cold atom artificial graphene
• Plasmons at the LaAlO${}_3$/SrTiO${}_3$ interface and Graphene-LaAlO${}_3$/SrTiO${}_3$ double layer
• Orbital and spin order in oxide two-dimensional electron gases
• Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications