Doping-dependent band structure of LaAlO${}_3$/SrTiO${}_3$ interfaces by soft x-ray polarization-controlled resonant angle-resolved photoemission

Abstract

Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO${}_3$/SrTiO${}_3$ in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements.

Main Text: 12 pages, 4 figures

References in corpus (4)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Surface defects and conduction in polar oxide heterostructures
• Coherent and Incoherent States of Electron-doped SrTiO3
• Structure and Correlation Effects in Semiconducting SrTiO${}_3$

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