Electronic structure of SrTiVO films studied by photoemission spectroscopy: Screening for a transparent electrode material
arXiv:2105.10706 · doi:10.1103/PhysRevB.104.115121
Abstract
This study investigated the electronic structure of SrTiVO (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO and oxide semiconductor SrTiO, using photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of transparent electrodes by varying . Systematic and significant spectral changes were found near the Fermi level () as a function of , while the overall electronic structure of STVO is in good agreement with the prediction of band structure calculations. As decreases from 1.0, spectral weight transfer occurs from the coherent band near to the incoherent states (lower Hubbard band) around 1.0-1.5 eV. Simultaneously, a pseudogap is formed at , indicating a significant reduction in quasiparticle spectral weight within close vicinity of . This pseudogap seems to evolve into an energy gap at = 0.4, suggesting the occurrence of a composition-driven metal-insulator transition. From angle-resolved photoemission spectroscopic results, the carrier concentration changes proportionally as a function of in the metallic range of = 0.6-1.0. In contrast, the mass enhancement factor, which is proportional to the effective mass (), does not change significantly with varying . These results suggest that the key factor of in optimizing the performance of correlated-metal TCO is tuned by , highlighting the potential of STVO to achieve the desired TCO performance in the metallic region.
arXiv comment32 pages, 5 main figures, and 7 supplementary figures
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