activity
20182026
most citedThickness dependence of electronic and crystal structures in VO ultrathin films: suppression of the collaborative Mott-Peierls transition

25 citations · 104 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.str-el2026

Robust topological surface states in skyrmion-host magnets Eu(Ga,Al)4: evidence for dual topology

Yuki Arai, Kosuke Nakayama, Takemi Kato +10

The interplay between real-space topology such as magnetic skyrmions and momentum-space topology characterized by topological surface states (TSSs) is predicted to realize novel ph…

cond-mat.str-el2026★ 3 cited

Origin of multiple skyrmion phases in EuAl4

Y. Arai, K. Nakayama, A. Honma +6

The Dzyaloshinskii-Moriya (DM) interaction has been considered essential for skyrmion formation, however, the discovery of skyrmion lattices (SkLs) in nominally centrosymmetric mat…

cond-mat.str-el2025★ 2 cited

Large Seebeck coefficient driven by "pudding mold" flat band in hole-doped CuRhO

Amitayush Jha Thakur, Maximilian Thees, Franck Fortuna +7

We report the measurement, using angle-resolved photoemission spectroscopy, of the metallic electronic structure of the hole-doped thermoelectric oxide CuRhMgO.…

cond-mat.str-el2022★ 5 cited

Electronic phase diagram of Cr-doped VO2 epitaxial films studied by in situ photoemission spectroscopy

D. Shiga, X. Cheng, T. T. Kim +5

Through in situ photoemission spectroscopy (PES), we investigated the changes in the electronic structure of Cr-doped VO2 films coherently grown on TiO2 (001) substrates. The elect…

cond-mat.str-el2022★ 9 cited

Electronic band structure of Ti2O3 thin films studied by angle-resolved photoemission spectroscopy

Naoto Hasegawa, Kohei Yoshimatsu, Daisuke Shiga +5

Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over a wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs…

cond-mat.str-el2021★ 11 cited

Electronic structure of SrTiVO films studied by photoemission spectroscopy: Screening for a transparent electrode material

Tatsuhiko Kanda, Daisuke Shiga, Ryu Yukawa +8

This study investigated the electronic structure of SrTiVO (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) Sr…

cond-mat.mtrl-sci2020★ 12 cited

Molecular beam epitaxy growth of the highly conductive oxide SrMoO

Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga +5

SrMoO is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_…

cond-mat.mtrl-sci2020★ 9 cited

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Y. Sato, Y. Fukaya, M. Cameau +11

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron r…

cond-mat.str-el2020★ 25 cited

Thickness dependence of electronic and crystal structures in VO ultrathin films: suppression of the collaborative Mott-Peierls transition

D. Shiga, B. E. Yang, N. Hasegawa +7

Through photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO films coherently grown on Ti…

cond-mat.str-el2019★ 19 cited

Relationship between charge redistribution and ferromagnetism at the heterointerface between perovskite oxides LaNiO and LaMnO

Miho Kitamura, Masaki Kobayashi, Enju Sakai +10

To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO (LNO) and LaMnO…

cond-mat.str-el2018★ 9 cited

Emergence of metallic monoclinic states of VO films induced by K deposition

Daisuke Shiga, Makoto Minohara, Miho Kitamura +3

In order to study the origin of metallization of VO induced by electron injection, we deposit K atoms onto the surface of VO films grown on TiO (001) substrates, and we…