D. Shiga

activity

20182026

most citedThickness dependence of electronic and crystal structures in VO

_{2}

ultrathin films: suppression of the collaborative Mott-Peierls transition

25 citations · 104 across the 11 of their papers we have counts for

collaborators

Showing 2020Show all

3 papers · 1 filter

cond-mat.mtrl-sci2020★ 12 cited

Molecular beam epitaxy growth of the highly conductive oxide SrMoO $_{3}$

Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga +5

SrMoO $_{3}$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_…

cond-mat.mtrl-sci2020★ 9 cited

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Y. Sato, Y. Fukaya, M. Cameau +11

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron r…

cond-mat.str-el2020★ 25 cited

Thickness dependence of electronic and crystal structures in VO $_{2}$ ultrathin films: suppression of the collaborative Mott-Peierls transition

D. Shiga, B. E. Yang, N. Hasegawa +7

Through $in s i t u$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO $_{2}$ films coherently grown on Ti…

Molecular beam epitaxy growth of the highly conductive oxide SrMoO3​

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Thickness dependence of electronic and crystal structures in VO2​ ultrathin films: suppression of the collaborative Mott-Peierls transition

Molecular beam epitaxy growth of the highly conductive oxide SrMoO $_{3}$

Thickness dependence of electronic and crystal structures in VO $_{2}$ ultrathin films: suppression of the collaborative Mott-Peierls transition