Molecular beam epitaxy growth of the highly conductive oxide SrMoO${}_3$

Abstract

SrMoO${}_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO${}_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO${}_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO${}_3$ or KTaO${}_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO${}_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces.

arXiv comment6 pages, 5 figures

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• The properties of ultrapure delafossite metals
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Cited by in corpus (3)

• Electronic structure of the highly conductive perovskite oxide SrMoO${}_3$
• Tunable electron scattering mechanism in plasmonic SrMoO${}_3$ thin films
• Hidden Ladder in SrMoO${}_3$/SrTiO${}_3$ Superlattices: Experiments and Theoretical Calculations